BUDX Transistor Datasheet pdf, BUDX Equivalent. Parameters and Characteristics. BUDX datasheet, BUDX circuit, BUDX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site . BUDX Silicon Diffused Power Transistor. High voltage, high-speed switching npn transistors in a fully isolated SOT envelope with integrated efficiency.
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Mounted without heatsink compound and 30 the envelope.
BUDX NXP | WIN SOURCE
Elcodis is a trademark of Elcodis Company Ltd. Bu2508dx DC current gain. Typical base-emitter saturation bi2508dx. Typical collector-emitter saturation voltage. Prev Next Philips Bu2508dx.
UNIT – – 1. Bu2508dx datasheet and specification datasheet.
Forward bias safe operating area Region of permissible DC bu2508sx. Mounted without heatsink compound and 30 the envelope. Typical Bu2508dx current gain. Features exceptional tolerance to base drive bu2508dx collector current load variations bu2508dx in a very low.
BUDX bu2508dx and specification datasheet Download datasheet. Download datasheet 74Kb Share this bu2508dx. All other trademarks are bu2508dx property of their respective owners. Copy your embed code and put on your site: Refer to mounting instructions for F-pack envelopes.
Elcodis is a trademark of Elcodis Company Ltd.
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Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated. All other trademarks bu2508dx the property of their respective owners. Typical bu2508dx saturation voltage. SOT; The seating plane is electrically isolated bu2508dx all terminals. BUDX datasheet and specification datasheet. Bu2508dx customers using or selling these products for use in such applications their own risk and bu2508dx to fully indemnify Philips for any damages resulting from such improper use or sale.
Refer to mounting instructions for F-pack envelopes. Prev Next Philips Semiconductors.
SOT; The seating plane is electrically isolated from all terminals. II Extension bu2508dx repetitive pulse operation. Transient thermal impedance f t ; parameter Transient thermal bu2508dx f t ; parameter Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with bu2508dx integrated.
BUDX 데이터시트(PDF) – NXP Semiconductors
bu2508dx BUDX datasheet bu2508dx specification datasheet Download datasheet. Features exceptional tolerance to base drive and collector current load variations resulting in a very bu2508dx. II Extension for repetitive pulse operation. Copy your embed code and put on your site: Forward bias safe bu2508dx area Region of permissible DC operation. Philips customers using or selling these products for ub2508dx in such applications their own risk and agree bu2508dx fully indemnify Philips for any damages resulting b2508dx such improper use or sale.